Thickness-dependent mobility in tetracene thin-film field-effect-transistors
نویسندگان
چکیده
منابع مشابه
Tetracene Based OTFT with Nd2O3-dielectric Layer
Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...
متن کاملField-effect transistors made from macroscopic single crystals of tetracene and related semiconductors on polymer dielectrics
We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm/V were measured, correlating well with expectations based on the literatur...
متن کاملProcess Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملEffect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown tha...
متن کاملProbing transconductance spatial variations in graphene nanoribbon field- effect transistors using scanning gate microscopy
Related Articles The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors APL: Org. Electron. Photonics 5, 21 (2012) Graphene-protein bioelectronic devices with wavelength-dependent photoresponse Appl. Phys. Lett. 100, 033110 (2012) Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidese...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015